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Blog Perusahaan Tentang Mingjiada Electronics Supply Infineon IPW65R080 650V CoolMOS ™ CFD2 Power Transistor

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perusahaan Blog
Mingjiada Electronics Supply Infineon IPW65R080 650V CoolMOS ™ CFD2 Power Transistor
berita perusahaan terbaru tentang Mingjiada Electronics Supply Infineon IPW65R080 650V CoolMOS ™ CFD2 Power Transistor

Mingjiada Electronics Supply Infineon IPW65R080 650V CoolMOS ™ CFD2 Power Transistor

 

Shenzhen Mingjiada Electronics Co., Ltd. — a long-standing supplier of Infineon’s IPW65R080 (full model number: IPW65R080CFD) 650V CoolMOS™ CFD2 series power transistors. Based on super-junction technology, this device is designed for applications such as high-efficiency switching power supplies, power factor correction, inverters and industrial power supplies, offering engineers a power MOSFET option with a 650V breakdown voltage and an on-resistance of approximately 80mΩ.

 

Product positioning: CoolMOS CFD2 balances low on-resistance with fast body diode recovery
The IPW65R080 belongs to the Infineon CoolMOS CFD2 product family. Building on the low on-resistance and low gate charge of super-junction MOSFETs, the CFD2 series emphasises the reverse recovery characteristics of the body diode, making it suitable for switching topologies that require frequent commutation or are sensitive to the recovery behaviour of the body diode. For both hard-switching and soft-switching power supply designs, this series offers a balance between efficiency, thermal performance and reliability.
The IPW65R080 is housed in a TO-247 package, rated at 650 V, with an on-resistance in the 80 mΩ range, making it suitable for high-frequency switching applications in the medium-power range. Its low on-resistance helps to reduce conduction losses, whilst the low gate charge provided by CoolMOS technology helps to reduce drive losses and improve overall system efficiency.
With its three core features—a 650 V voltage rating, 80 mΩ on-resistance and an integrated ultra-fast body diode—the IPW65R080 has become the mainstream choice for topologies such as PFC, LLC and phase-shifted full-bridge (ZVS).

 

Overview of Key Features of the IPW65R080
Integrated fast body diode, 650 V
Low voltage overshoot in hard switching
650 V voltage rating: Suitable for high-voltage applications such as off-line switching power supplies, PFC and inverters;
On-resistance of approximately 80 mΩ: Helps reduce conduction losses and improve temperature rise performance;
CoolMOS super-junction technology: Combines low on-resistance with low gate charge;
CFD2 fast body diode: Designed for switching topologies with specific requirements for body diode reverse recovery;
TO-247 package: Facilitates thermal design and PCB layout for medium to high power applications;
Suitable for high-frequency switching: Helps improve power density and reduce the size of magnetic components

 

Typical Applications
The IPW65R080 is commonly found in power electronic systems with high efficiency and reliability requirements. Typical applications include:
server power supplies, telecommunications rectifiers and industrial switching power supplies;
power factor correction (PFC) circuits;
soft-switching topologies such as LLC resonant converters and phase-shifted full-bridge converters;
photovoltaic inverters, energy storage converters and UPS systems;
electric vehicle charging equipment and on-board power modules;
LED driver power supplies, high-power adapters and variable-frequency control in household appliances.
In the above applications, device selection requires a comprehensive assessment taking into account operating frequency, current stress, thermal conditions, drive voltage and the commutation conditions of the body diode. For bridge topologies requiring rapid body diode recovery, the CFD2 series should be a key candidate for evaluation; for low-frequency, high-current applications where conduction losses are the primary concern, a comparison of different RDS(on) ratings and package thermal resistance is required.

 

The Infineon IPW65R080 650V CoolMOS™ CFD2 power transistor, with its 650V rating, on-resistance of approximately 80 mΩ and fast body diode characteristics, provides a practical component option for high-efficiency switching power supplies and power conversion systems.

 

For further information on the [Infineon] IPW65R080 650V CoolMOS™ CFD2 power transistor or to enquire about sample prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for further supply details.
Tag: IPW65R080CFD, IPW65R080CF, IPW65R080C, IPW65R080

Pub waktu : 2026-10-31 11:17:38 >> daftar berita
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