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Detail produk:
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| Nomor bagian: | Std10nm60n | Polaritas Transistor:: | Saluran-N |
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| Jumlah Saluran:: | 1 saluran | VDS - Tegangan Breakdown Drain-Source:: | 600 v |
| Id - Arus Pembuangan Berkelanjutan:: | 10 A | Rds On - Ketahanan Drain-Source:: | 550 mOhm |
STD10NM60N Integrated Circuit Chip N-Channel 600V 10A 530mΩ MOSFET Transistors Product Description Of STD10NM60N STD10NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Specifications Of STD10NM60N
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