|
Detail produk:
|
| Nomor bagian: | IPA65R660CFD | Polaritas Transistor:: | Saluran-N |
|---|---|---|---|
| VDS - Tegangan Breakdown Drain-Source:: | 650 v | Id - Arus Pembuangan Berkelanjutan:: | 6 A |
| Rds On - Ketahanan Drain-Source:: | 1.544 ohm | Vgs - Tegangan Sumber Gerbang:: | - 20 V, + 20 V |
| Menyoroti: | IPA65R660CFD,IPA65R660CFD Integrated Circuit Chip,N-Channel Power MOSFET Transistors |
||
IPA65R660CFD Integrated Circuit Chip 650V CoolMOS™ CFD2 N-Channel Power MOSFET Transistors Product Description Of IPA65R660CFD IPA65R660CFD CoolMOS™ CFD2 is second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Kontak Person: Sales Manager
Tel: 86-13410018555
Faks: 86-0755-83957753