IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

Name: IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IRF100P219
Availability: InStock

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IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

Gambar besar : IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

Detail produk:

Tempat asal:	CN
Nama merek:	Original Factory
Sertifikasi:	Lead free / RoHS Compliant
Nomor model:	IRF100P219

Syarat-syarat pembayaran & pengiriman:

Kuantitas min Order:	10
Harga:	Contact for Sample
Kemasan rincian:	KE-247-3
Waktu pengiriman:	5-8 HARI KERJA
Syarat-syarat pembayaran:	T/T, L/C, Western Union

Kontak

IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

Deskripsi

Nomor bagian:	IRF100P219	Seri:	IRFET™ yang kuat
Tiriskan ke Tegangan Sumber (Vdss):	100 v	Arus - Pengurasan Berkelanjutan (Id) @ 25°C:	203A (Tc)
Disipasi Daya (Maks):	3,8W (Ta), 341W (Tc)	Suhu Operasional:	-55 °C hingga 175 °C
Menyoroti:	100V Drain to Source Voltage Power MOSFET Transistor , 203A Continuous Drain Current Integrated Circuit Chip , 175°C Operating Temperature StrongIRFET™ MOSFET

IRF100P219 Integrated Circuit Chip 100V StrongIRFET™ Single N-Channel Power MOSFET Transistors

The IRF100P219 is a 100V StrongIRFET™ Single N-Channel Power MOSFET Transistor in a TO-247 package, designed for high-performance power applications.

Product Specifications

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs	210 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12020 pF @ 50 V
Power Dissipation (Max)	3.8W (Ta), 341W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

Key Features

Very low on-resistance Rds(on)
Excellent gate charge x Rds(on) (FOM)
Optimized Qrr
175°C operating temperature
Product validation according to JEDEC standard
Optimized for broadest availability from distribution partners

Performance Benefits

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free; RoHS Compliant; Halogen-Free

Applications

Battery energy storage (BESS)
DIN rail power supply solutions
Telecommunications infrastructure
1-phase string inverter solutions
Uninterruptible power supplies (UPS)

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ADM3061EBRZ	8-SOIC

Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample orders and small orders. Sample cost varies according to your order or project requirements.

How to ship my order? Is it safe?

We use express carriers such as DHL, FedEx, UPS, TNT, and EMS. We can also use your suggested forwarder. Products are carefully packaged to ensure safety, and we take responsibility for any damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. For items not in stock, we will confirm the lead time based on your order quantity.

Label:

Kontak Person: Sales Manager

Tel: 86-13410018555

Faks: 86-0755-83957753

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IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

IRF100P219 100V StrongIRFET™ Power MOSFET Transistor with 203A Drain Current and 175°C Operating Temperature

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