Cina Chip Sirkuit Terpadu

Chip IC MSC025SMA120S 1200 V Silicon Carbide N-Channel MOSFET Transistor

Nomor bagian:MSC025SMA120S

Tipe FET:Saluran-N

Arus - Pengurasan Berkelanjutan (Id) @ 25°C:89A (Tc)
Chip Sirkuit Terpadu MSC180SMA120B 1200V SiC MOSFET Transistor TO-247-4

Nomor Bagian:MSC180SMA120B

Polaritas transistor:Saluran-N

Gaya Pemasangan:Melalui lubang
Chip Sirkuit Terpadu MSC090SMA070S 700V SiC MOSFET Transistor TO-268-3

Nomor Bagian:MSC090SMA070S

Id - Arus Tiriskan Terus Menerus:25 A

Resistensi termal sambungan-ke-kasing (Typ):1,10W/°C
Silikon Karbida MSC015SMA070B4 N-Channel SiC MOSFET Transistor TO-247-4 Chip IC

Nomor Bagian:MSC015SMA070B4

Arus penguras berdenyut:350A

Faktor penurunan daya linier:3,03W/°C
Transistor IPBE65R075CFD7AATMA1 TO-263-7 Transistor MOSFET Kelas Otomotif 650V

Nomor bagian:IPBE65R075CFD7AATMA1

Rds On - Resistensi Drain-Source:139 mOhm

Vgs - Tegangan Sumber Gerbang:- 20 V, + 20 V
Integrated Circuit Chip BSZ036NE2LSATMA1 N-Channel MOSFET Transistors 8-PowerTDFN

Nomor bagian:BSZ036NE2LSATMA1

Suhu Operasional Maksimum:+ 150 C

Pd - Disipasi Daya:37 W
N-Channel IMBG65R030M1HXTMA1 Transistor MOSFET TO-263-8 Chip Sirkuit Terpadu

Nomor bagian:IMBG65R030M1HXTMA1

Kapasitansi Input (Ciss) (Maks) @ Vds:1643 pF @ 400 V

Disipasi Daya (Maks):234W (Tc)
N-Channel IPT026N10N5ATMA1 MOSFET Transistor Chip Sirkuit Terpadu 8-PowerSFN

Nomor bagian:IPT026N10N5ATMA1

ID (@ TC=25°C) - Maks:202 A

ID (@25°C) - Maks:202 A
IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistor TO-263-8

Nomor bagian:IMBF170R450M1XTMA1

Hitung Pin:7 pin

Qg:11 nC
N-Channel IPT60R022S7XTMA1 MOSFET Transistor Chip Sirkuit Terpadu 8-PowerSFN

Nomor bagian:IPT60R022S7XTMA1

Paket / Kasus:HSOF-8

Rds On - Resistensi Drain-Source:22 mOhm
Chip Sirkuit Terpadu BSZ060NE2LSATMA1 8-PowerTDFN N-Channel MOSFET Transistor

Nomor bagian:BSZ060NE2LSATMA1

Subkategori:MOSFET

Lebar:3,3 mm
N-Channel NVH4L160N120SC1 SiC Transistor MOSFET Daya Tunggal KE-247-4 1200V

Nomor bagian:NVH4L160N120SC1

Suhu Operasional Minimum:- 55°C

Pd - Disipasi Daya:111 W

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Chip IC MSC025SMA120S 1200 V Silicon Carbide N-Channel MOSFET Transistor

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IMBF170R450M1XTMA1 1700V Trench Type Silicon Carbide MOSFET Transistor TO-263-8

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