Cina Chip Sirkuit Terpadu

Chip Sirkuit Terpadu SCTWA90N65G2V N-Channel 650V Transistor TO-247-3

Nomor bagian:SCTWA90N65G2V

Biaya Gerbang (Qg) (Maks) @ Vgs:157 nC @ 18 V

Kapasitansi Input (Ciss) (Maks) @ Vds:3380 pF @ 400 V
H2PAK-7 Surface Mount SCTH90N65G2V-7 N-Channel Silicon Carbide Transistor

Nomor bagian:SCTH90N65G2V-7

Tipe FET:Saluran-N

Id - Arus Tiriskan Terus Menerus:90 A
Transistor N-Channel SCT4026DW7HRTL Chip Sirkuit Terpadu TO-263-7L SiC Power MOSFET

Nomor bagian:SCT4026DW7HRTL

Polaritas transistor:Saluran-N

VDS - Tegangan Breakdown Drain-Source:750 V
Chip Sirkuit Terpadu NVBG020N090SC1 Transistor N-Channel Tunggal D2PAK-7 28mOhm

Nomor bagian:NVBG020N090SC1

Waktu Tunda Penyalaan Umum:39 n

Tipe Transistor:1 Saluran-N
Chip Sirkuit Terpadu TW070J120B, S1Q N-Channel MOSFET Transistor TO-3P-3

Nomor bagian:TW070J120B,S1Q

Tegangan tinggi:VDSS = 1200 V

Tegangan Sumber Gerbang:+25V/-10V
Transistor TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFET Transistor 1200V

Nomor bagian:TW015N120C,S1F

Tegangan Drive (Max Rds On, Min Rds On):18V

Biaya Gerbang (Qg) (Maks) @ Vgs:158 nC @ 18 V
Silicon Carbide MOS Transistor TW107N65C, S1F N-Channel TO-247-3 650V Chip IC

Nomor bagian:TW107N65C,S1F

Qg - Biaya Gerbang:28 nC

Vgs - Tegangan Sumber Gerbang:- 10 V, + 25 V
Chip Sirkuit Terpadu TW027N65C, S1F N-Channel Transistor TO-247-3 Silicon Carbide

Nomor bagian:TW027N65C,S1F

Kategori Produk:MOSFET

Jumlah saluran:1 Saluran
Transistor SCTW100N65G2AG MOSFET Silikon Karbida Kelas Otomotif 650V 100A 20mOhm

Nomor bagian:SCTW100N65G2AG

Tipe FET:Saluran-N

Teknologi:SiCFET (Silikon Karbida)
8-PowerVDFN SCTL90N65G2V MOSFET Silikon Karbida MOSFET Daya 650V 18mOhm Typ 40 A

Nomor bagian:SCTL90N65G2V

Teknologi:SIC

Polaritas transistor:Saluran-N
Chip Sirkuit Terpadu SCT30N120H N-Channel 1200V Transistor MOSFET Tunggal

Nomor bagian:SCT30N120H

Teknologi:SiCFET (Silikon Karbida)

Tegangan penggerak:20V
1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Melalui Lubang HiP247

Nomor bagian:SCTWA50N120

Rds On - Resistensi Drain-Source:52 mOhm

Vgs - Tegangan Sumber Gerbang:- 10 V, + 25 V

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Chip Sirkuit Terpadu SCTWA90N65G2V N-Channel 650V Transistor TO-247-3

H2PAK-7 Surface Mount SCTH90N65G2V-7 N-Channel Silicon Carbide Transistor

Transistor N-Channel SCT4026DW7HRTL Chip Sirkuit Terpadu TO-263-7L SiC Power MOSFET

Chip Sirkuit Terpadu NVBG020N090SC1 Transistor N-Channel Tunggal D2PAK-7 28mOhm

Chip Sirkuit Terpadu TW070J120B, S1Q N-Channel MOSFET Transistor TO-3P-3

Transistor TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFET Transistor 1200V

Silicon Carbide MOS Transistor TW107N65C, S1F N-Channel TO-247-3 650V Chip IC

Chip Sirkuit Terpadu TW027N65C, S1F N-Channel Transistor TO-247-3 Silicon Carbide

Transistor SCTW100N65G2AG MOSFET Silikon Karbida Kelas Otomotif 650V 100A 20mOhm

8-PowerVDFN SCTL90N65G2V MOSFET Silikon Karbida MOSFET Daya 650V 18mOhm Typ 40 A

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1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Melalui Lubang HiP247

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