Kuantitas min Order:10
Harga:Contact for Sample
Kemasan rincian:Paket standar
Kuantitas min Order:10
Harga:Contact for Sample
Kemasan rincian:Paket standar
Kuantitas min Order:10
Harga:Contact for Sample
Kemasan rincian:Paket standar
Kuantitas min Order:10
Harga:Contact for Sample
Kemasan rincian:Paket standar
Kuantitas min Order:10
Harga:Contact for Sample
Kemasan rincian:Paket standar
Nomor Bagian:IKW50N65WR5
berat unit:6.047 gram
Arus Kebocoran Gerbang-Emitor:100 nA
Nomor Bagian:IXTP160N10T
Tipe FET:Saluran-N
teknologi:MOSFET (Oksida Logam)
Nomor Bagian:BSC026N08NS5
teknologi:Ya
Polaritas transistor:Saluran-N
Nomor Bagian:IPB100N04S4-H2
Polaritas transistor:Saluran-N
VDS - Tegangan Breakdown Drain-Source:40 V
Nomor Bagian:IPDD60R050G7
Polaritas transistor:Saluran-N
VDS - Tegangan Breakdown Drain-Source:600 V
Nomor Bagian:IPB042N10N3G
Seri:OptiMOS™
Tipe FET:Saluran-N
Nomor Bagian:IPP051N15N5
Ketinggian:15,65mm
Panjang:10 mm