Rumah Produk

Modul IGBT Otomotif

Produk terbaik

Econo Daya Sedang FF900R12ME7WB11BPSA1 Modul IGBT PIM Tiga Fase Ganda

FS3L200R10W3S7FB11BPSA1 20mW 3 Phase IGBT Modul 950V 70A Energi Fotovoltaik

Modul IGBT Otomotif FF900R12ME7B11NPSA1 1200V 900A Modul IGBT Ganda

Cina Modul IGBT Otomotif

Modul IGBT 1200V 100A FP100R12N2T7B11BPSA1 Trench Field Stop Inverter Tiga Fasa

Nomor Bagian:FP100R12N2T7B11BPSA1

Seri:EcoNOPIM™ 2

Tipe IGBT:Pemberhentian Lapangan Parit
2N-Channel FF6MR12W2M1B11BOMA1 Modul IGBT Otomotif 1200V Silikon Karbida

Nomor Bagian:FF6MR12W2M1B11BOMA1

Tipe Pemasangan:Dudukan Chasis

Suhu Operasional (Min):-40°C (TJ)
Modul IGBT Otomotif 25A FS45MR12W1M1B11BOMA1 20mW 6N-Channel MOSFET Modul

Nomor Bagian:FS45MR12W1M1B11BOMA1

Tiriskan ke Tegangan Sumber (Vdss):1200V (1.2kV)

Konfigurasi:6 Saluran-N (Jembatan 3 Fase)
Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Modul IGBT Otomotif

Nomor Bagian:DF17MR12W1M1HFB68BPSA1

Tipe FET:Saluran-N

Arus - Pengurasan Berkelanjutan (Id) @ 25°C:45A (Tj)
Modul IGBT Otomotif DF8MR12W1M1HFB67BPSA1 2N-Channel Silicon Carbide Module

Nomor Bagian:DF8MR12W1M1HFB67BPSA1

Teknologi:Silikon Karbida (SiC)

Tiriskan ke Tegangan Sumber (Vdss):1200V
Modul IGBT 2000V DF419MR20W3M1HFB11BPSA1 Modul IGBT Otomotif Modul 60A

Nomor Bagian:DF419MR20W3M1HFB11BPSA1

Tegangan uji isolasi:3.2kV

Modul induktansi liar (Typ):14nH
Modul IGBT Otomotif DF11MR12W1M1PB11BPSA1 1200V Silicon Carbide CoolSiC MOSFET

Nomor Bagian:DF11MR12W1M1PB11BPSA1

Seri:EasyPACK™

Suhu Operasional (Maks):150°C (TJ)
Modul IGBT Otomotif 20mW DF23MR12W1M1B11BPSA1 Modul Silicon Carbide MOSFET

Nomor Bagian:DF23MR12W1M1B11BPSA1

Vdss:1200V

nomor identitas:25A
Modul IGBT Otomotif Modul IGBT Transistor FF600R12ME4WB73BPSA1 600A

Nomor Bagian:FF600R12ME4WB73BPSA1

Kapasitansi Masukan (Cies) @ Vce:37 nF @ 25 V

Memasukkan:Standar
Chassis Mount FS150R12N2T7B15BPSA1 1200V 150A Transistor Modul IGBT

Nomor Bagian:FS150R12N2T7B15BPSA1

Saat Ini - Cutoff Kolektor:12 µA

Suhu Operasional Minimum:- 40 C
Silicon Carbide DF23MR12W1M1PB11BPSA1 Modul IGBT Otomotif 20mW 2N-Channel

Nomor Bagian:DF23MR12W1M1PB11BPSA1

Teknologi:Silikon Karbida (SiC)

Tiriskan ke Tegangan Sumber (Vdss):1200V (1.2kV)
Modul IGBT Otomotif FP200R12N3T7B11BPSA1 20 mW Chassis Mount Modul IGBT

Nomor Bagian:FP200R12N3T7B11BPSA1

Daya - Maks:20 mW

VCEO Maks:1200 V

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Modul IGBT Otomotif

Econo Daya Sedang FF900R12ME7WB11BPSA1 Modul IGBT PIM Tiga Fase Ganda

FS3L200R10W3S7FB11BPSA1 20mW 3 Phase IGBT Modul 950V 70A Energi Fotovoltaik

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Modul IGBT 1200V 100A FP100R12N2T7B11BPSA1 Trench Field Stop Inverter Tiga Fasa

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Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Modul IGBT Otomotif

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Modul IGBT Otomotif DF11MR12W1M1PB11BPSA1 1200V Silicon Carbide CoolSiC MOSFET

Modul IGBT Otomotif 20mW DF23MR12W1M1B11BPSA1 Modul Silicon Carbide MOSFET

Modul IGBT Otomotif Modul IGBT Transistor FF600R12ME4WB73BPSA1 600A

Chassis Mount FS150R12N2T7B15BPSA1 1200V 150A Transistor Modul IGBT

Silicon Carbide DF23MR12W1M1PB11BPSA1 Modul IGBT Otomotif 20mW 2N-Channel

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