Rumah Produk

Modul IGBT Otomotif

Produk terbaik

Econo Daya Sedang FF900R12ME7WB11BPSA1 Modul IGBT PIM Tiga Fase Ganda

FS3L200R10W3S7FB11BPSA1 20mW 3 Phase IGBT Modul 950V 70A Energi Fotovoltaik

Modul IGBT Otomotif FF900R12ME7B11NPSA1 1200V 900A Modul IGBT Ganda

Cina Modul IGBT Otomotif

FP75R12N2T7BPSA2 1200V 75A 20mW Trench Field Stop Transistor Modul IGBT

Nomor Bagian:FP75R12N2T7BPSA2

Kolektor- Tegangan Emitor VCEO Max:1200 V

Tegangan Saturasi Kolektor-Emitor:1,55 V
Modul IGBT Otomotif FS75R12KE3BPSA1 Modul IGBT Transistor Chassis Mount

Nomor Bagian:FS75R12KE3BPSA1

Suhu Operasional:-40°C ~ 150°C (TJ)

Tipe Pemasangan:Dudukan Chasis
FP75R12N2T4BPSA1 Modul IGBT Trench Field Stop 1200V 75A Chassis Mount

Nomor Bagian:FP75R12N2T4BPSA1

tipe produk:Modul IGBT

Tegangan Saturasi Kolektor-Emitor:1,85 V
20mW Chassis Mount FS150R12N2T7BPSA2 Modul IGBT Otomotif Tiga Fase

Nomor Bagian:FS150R12N2T7BPSA2

Tegangan - Kerusakan Emitor Kolektor:1200 V

Saat Ini - Cutoff Kolektor:1,2 µA
Modul IGBT Otomotif FP100R12N2T7BPSA2 3-Phase Inverter IGBT Silicon Modules

Nomor Bagian:FP100R12N2T7BPSA2

Suhu Operasional Minimum:- 40 C

Suhu Operasional Maksimum:+ 175 C
Modul IGBT Otomotif FP150R12N3T7B11BPSA1 1200V 150A 20mW Chassis Mount

Nomor Bagian:FP150R12N3T7B11BPSA1

Kategori Produk:Modul IGBT

Vce(aktif) (Maks) @ Vge, Ic:1.8V @ 15V, 150A
Modul IGBT 1200V 100A FP100R12N2T7B11BPSA1 Trench Field Stop Inverter Tiga Fasa

Nomor Bagian:FP100R12N2T7B11BPSA1

Seri:EcoNOPIM™ 2

Tipe IGBT:Pemberhentian Lapangan Parit
2N-Channel FF6MR12W2M1B11BOMA1 Modul IGBT Otomotif 1200V Silikon Karbida

Nomor Bagian:FF6MR12W2M1B11BOMA1

Tipe Pemasangan:Dudukan Chasis

Suhu Operasional (Min):-40°C (TJ)
Modul IGBT Otomotif 25A FS45MR12W1M1B11BOMA1 20mW 6N-Channel MOSFET Modul

Nomor Bagian:FS45MR12W1M1B11BOMA1

Tiriskan ke Tegangan Sumber (Vdss):1200V (1.2kV)

Konfigurasi:6 Saluran-N (Jembatan 3 Fase)
Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Modul IGBT Otomotif

Nomor Bagian:DF17MR12W1M1HFB68BPSA1

Tipe FET:Saluran-N

Arus - Pengurasan Berkelanjutan (Id) @ 25°C:45A (Tj)
Modul IGBT Otomotif DF8MR12W1M1HFB67BPSA1 2N-Channel Silicon Carbide Module

Nomor Bagian:DF8MR12W1M1HFB67BPSA1

Teknologi:Silikon Karbida (SiC)

Tiriskan ke Tegangan Sumber (Vdss):1200V
Modul IGBT 2000V DF419MR20W3M1HFB11BPSA1 Modul IGBT Otomotif Modul 60A

Nomor Bagian:DF419MR20W3M1HFB11BPSA1

Tegangan uji isolasi:3.2kV

Modul induktansi liar (Typ):14nH

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Econo Daya Sedang FF900R12ME7WB11BPSA1 Modul IGBT PIM Tiga Fase Ganda

FS3L200R10W3S7FB11BPSA1 20mW 3 Phase IGBT Modul 950V 70A Energi Fotovoltaik

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Modul IGBT Otomotif 25A FS45MR12W1M1B11BOMA1 20mW 6N-Channel MOSFET Modul

Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Modul IGBT Otomotif

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