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STGW80H65DFB Integrated Circuit Chip Trench Gate Field-Stop High Speed HB Series IGBT Transistor

Chip Sirkuit Terpadu
May 29, 2025
Koneksi Kategori: Chip Sirkuit Terpadu
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#Chip Sirkuit Terpadu 24-PQFN #TUSB1002ARGER Dual Channel Linear #Chip Terintegrasi QFN24
Brief: Discover the STGW80H65DFB Integrated Circuit Chip, a high-speed HB Series IGBT Transistor with a trench gate field-stop structure. Ideal for photovoltaic inverters and high-frequency converters, this 650V 80A device offers optimal efficiency with low saturation voltage and safe paralleling capabilities.
Related Product Features:
  • Struktur field-stop gerbang parit canggih untuk efisiensi tinggi.
  • 650V collector-emitter breakdown voltage and 80A collector current.
  • Seri sakelar berkecepatan tinggi dengan arus ekor yang diminimalkan.
  • Low saturation voltage: VCE(sat) = 1.6V (typ.) @ IC = 80A.
  • Positive VCE(sat) temperature coefficient for safer paralleling.
  • Distribusi parameter yang ketat memastikan kinerja yang konsisten.
  • Very fast soft recovery antiparallel diode for enhanced reliability.
  • Operating temperature range: -55°C to 175°C (TJ).
Pertanyaan Umum:
  • What is the maximum junction temperature of the STGW80H65DFB?
    The maximum junction temperature is TJ = 175°C.
  • What applications is the STGW80H65DFB suitable for?
    It is ideal for photovoltaic inverters and high-frequency converters.
  • Does the STGW80H65DFB support safe paralleling?
    Yes, its slightly positive VCE(sat) temperature coefficient and tight parameter distribution enable safe paralleling.
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