Brief: Discover the IRF1310NPBF Integrated Circuit Chip, a 100V HEXFET Power MOSFET Transistor in TO-220-3 package. Ideal for high-power applications, it features advanced process technology, fast switching, and a 175°C operating temperature. Perfect for engineers seeking reliable performance.
Related Product Features:
100V, 42A, 36mOhm HEXFET® N-Channel Power MOSFET in TO-220-3 package.
Advanced process technology for superior performance.
Dynamic dv/dt rating ensures stability under varying conditions.
Operates at temperatures up to 175°C for high-power applications.
Fast switching capability enhances efficiency.
Fully avalanche rated for robust durability.
Lead-free design complies with environmental standards.
Suitable for through-hole mounting with a single-channel configuration.
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